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Long-range lateral dopant diffusion in tungsten silicide layers

This paper was the result of an EPSRC-funded research project (EP/D060230/1), with industrial partners Zarlink and IceMOS Technology Ltd. Rapid diffusion of boron, phosphorus and arsenic in WSi2 has been demonstrated and characterised for the first time. Influence of WSi2 morphology and local interface materials has been established. The new technology can be employed in vertical bipolar and MOS power transistor technology manufactured on advanced silicon on insulator (SOI) platforms. Significant process simplification can be achieved and reduction of buried collector or drain parasitic series resistance may be reduced by 2 orders of magnitude thus significantly increasing performance and reliability.