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Germanium bonding to AI2O3

This paper reports the early work carried out to demonstrate germanium bonding to sapphire and alumina, under the EPSRC-funded GEMS contract (EP/E030130/1), which included Oxford Instruments and IceMOS Technology Ltd as industrial partners. Completely unique germanium-on-sapphire and germanium-on-alumina structures were thus created, which were later used for fabrication of germanium MOSFETs. These novel substrates are ideally suited for integration of optoelectronic and rf devices. High-quality germanium-to-sapphire bonding was achieved by employing an interfacial silicon dioxide layer. For alumina substrates, the surface roughness was reduced by coating with polysilicon and then polishing. High-quality germanium-to-alumina bonding was thus achieved.