Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Queen's University Belfast
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Article title
Germanium on sapphire
Type
D - Journal article
Title of journal
International Journal of High Speed Electronics and Systems
Article number
-
Volume number
18
Issue number
4
First page of article
805
ISSN of journal
0129-1564
Year of publication
2008
URL
-
Number of additional authors
8
Additional information
This paper provides a unique and comprehensive exploration of the potential of germanium-on-sapphire (GeOS) substrates to revolutionise the fabrication of high performance system-on-chip SOC architectures. The paper illustrates methods of production, including the use of ion-cut technology to achieve ultra-thin germanium layers. The results show the significant performance gains that are possible using the GeOS structures. Integration of GaAs for fabrication of an infrared imager system is also discussed. The methods described was supported by EPSRC programme EP/E030130/01and serves as a platform for development of high performance electronics.
Interdisciplinary
-
Cross-referral requested
-
Research group
A - High Frequency Electronics (HFE)
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
