Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Queen's University Belfast
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Article title
Germanium on Sapphire By Wafer Bonding
Type
D - Journal article
Title of journal
Solid State Electronics
Article number
-
Volume number
52
Issue number
12
First page of article
1840
ISSN of journal
00381101
Year of publication
2008
URL
-
Number of additional authors
6
Additional information
This paper reports the first time fabrication of MOS transistors on germanium-on-sapphire substrates using wafer bonding technology. The novel technology results in significant performance enhancement of high speed electronics. The high carrier mobilities of germanium semiconductor are combined with sapphire low rf loss and reduced cross-talk characteristics. The structures are also compatible with the growth of GaAs layers for opto-electrical applications.
Interdisciplinary
-
Cross-referral requested
-
Research group
A - High Frequency Electronics (HFE)
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
