Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Glyndŵr University
Article title
Growth and application of epitaxial heterostructures with polymorphous rare-earth oxides
Type
D - Journal article
Title of journal
Journal of Crystal Growth
Article number
-
Volume number
378
Issue number
-
First page of article
177
ISSN of journal
00220248
Year of publication
2013
URL
-
Number of additional authors
6
Additional information
Cubic lanthanide sesquioxide cations with atom radius larger than promethium could be used as a buffer layer for growth of semiconductors with a cubic structure on Si due to the close matching of lattice constants.Epitaxial stabilization of pseudomorphic cubic structure of lanthanum oxide grown on a cubic template is demonstrated, serving as a buffer for growth of Ge/GaAs layers on Si substrate. Gd2O3 was also grown on hexagonal GaN: this could be used as a gate dielectric layer for GaN based electronic devices. Lattice matching is important for high-power optoelectronics.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
