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15 - General Engineering

University of Glasgow

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Output 46 of 285 in the submission

Article title

An ultra-low-power MMIC amplifier using 50nm delta -Doped In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMT

Type

D - Journal article

DOI

10.1109/LED.2010.2070484

Title of journal

IEEE Electron Device Letters

Article number

Volume number

Issue number

First page of article

1230

ISSN of journal

0741-3106

Year of publication

2010

URL

Number of additional authors

Additional information

The performance of an ultra-low-power monolithic amplifier using 50nm gate-length metamorphic HEMTs is described. The single-stage amplifier consumes only 0.9mW, the lowest reported for an amplifier operating in the 24GHz band. The MMIC technology developed in this work is a critical building block in wireless sensor networks that are widely predicted to have major growth opportunities in imaging, safety, biomedical and environmental applications. The research was a factor in securing funding from BAE Systems (£81k) and QinetiQ (£116k). The paper also resulted in an invited talk at the prestigious European Microwave Integrated Circuits Conference, Manchester, 2011 (http://www.eumweek.com/2011/default.asp).

Interdisciplinary

Cross-referral requested

Research group

A - Electronics & Nanoscale Engineering

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract