Output details

1 mu m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 mu S/mm

This is the first paper to report on InP based III-V MOSFETs as a potential replacement for silicon devices in future CMOS-based microprocessors. Electronics Letters was chosen to ensure rapid publication of our data ahead of inferior work by US competitors. These results demonstrated for the first time high device performance (high trans-conductance and drain current) using the InP material system which has since seen Intel integrate this technology into its device development cycle with a view to exploring production. The publication was instrumental in leveraging $540k of continued funding from the US Semiconductor Research Corporation.