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Output details

9 - Physics

Output 2 of 101 in the submission

Article title

A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

Type

D - Journal article

DOI

Title of journal

IEEE Transactions on Electron Devices

Article number

Volume number

Issue number

First page of article

3081

ISSN of journal

1557-9646

Year of publication

2011

URL

Number of additional authors

Additional information

Interdisciplinary

Yes

Cross-referral requested

Research group

None

Citation count

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract