Output details
15 - General Engineering
University of Liverpool
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Output 0 of 0 in the submission
Article title
Atomic layer deposition of TaN and Ta3N5 using pentakis(dimethylamino)tantalum and either ammonia or monomethylhydrazine
Type
D - Journal article
Title of journal
Journal of Crystal Growth
Article number
-
Volume number
331
Issue number
1
First page of article
33
ISSN of journal
00220248
Year of publication
2011
URL
-
Number of additional authors
3
Additional information
Method for manufacturing a CMOS gate-stack metallisation layer using an ammonia-based process. Done in collaboration with SAFC Hitech and Oxford Instruments. The work was presented as an invited talk at the International Atomic Layer Deposition 2010 conference in Seoul (evidence file Potter1-1.pdf).
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
