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13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Liverpool

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Article title

Electron trapping at the high-k/GeO2 interface: The role of bound states

Type

D - Journal article

DOI

10.1063/1.4794544

Title of journal

Applied Physics Letters

Article number

Volume number

102

Issue number

First page of article

092103

ISSN of journal

00036951

Year of publication

2013

URL

Number of additional authors

Additional information

This paper is aimed at the next generation of advanced high-k dielectrics on germanium, and it anticipates the effect of a potential well formed at the native GeO2/high-k interface on device stability. This paper was supported by an EPSRC project (EP/1012907/1) awarded to Liverpool, Cambridge and LJMU in 2010. The work instigated further papers presented at EMRS’2013 and INFOS’2013 conferences, and an invitation to join a consortium led by Tyndall, UCC.

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract