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13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Liverpool

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Article title

Influence of interlayer properties on the characteristics of high-k gate stacks

Type

D - Journal article

DOI

10.1016/j.sse.2012.04.042

Title of journal

Solid-State Electronics

Article number

Volume number

Issue number

First page of article

ISSN of journal

00381101

Year of publication

2012

URL

Number of additional authors

Additional information

The paper studies the effect of the interface on transistor performance for HfO2/Si stacks, currently in use in the most advanced CMOS devices. The work involved a long-term collaboration with Chalmers University from a European funding portfolio (SINANO, PULLNANO, NANOSIL). The theoretical model of interfacial transitions underpinned the derivation of a novel method for analysing electron capture at oxide traps (Applied Physics Letters, vol. 102, p. 211604, 2013).

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract