Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Liverpool
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Article title
Influence of interlayer properties on the characteristics of high-k gate stacks
Type
D - Journal article
Title of journal
Solid-State Electronics
Article number
-
Volume number
75
Issue number
-
First page of article
63
ISSN of journal
00381101
Year of publication
2012
URL
-
Number of additional authors
2
Additional information
The paper studies the effect of the interface on transistor performance for HfO2/Si stacks, currently in use in the most advanced CMOS devices. The work involved a long-term collaboration with Chalmers University from a European funding portfolio (SINANO, PULLNANO, NANOSIL). The theoretical model of interfacial transitions underpinned the derivation of a novel method for analysing electron capture at oxide traps (Applied Physics Letters, vol. 102, p. 211604, 2013).
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-