Output details
15 - General Engineering
University of Glasgow
Electrical type conversion of p-type HgCdTe induced by nanoimprinting
The paper describes a pioneering investigation carried out in collaboration with the University of Western Australia into a novel use of nano-imprint lithography. It aimed to overcome the well-known difficulty of producing n-type HgCdTe. It is shown that by creating a depression in a p-HgCdTe surface, localized type-conversion occurs around the imprinted area through inelastic deformation of the semiconductor. This result opens up the possibility of fabricating infrared p-n junction photodetector arrays based on HgCdTe using simple and cheap processing methods. Results from the work contributed to the award of EPSRC funding for SUPERCAMERA (EP/J018678/1, £1.5M).