Output details
15 - General Engineering
University of Glasgow
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Article title
Electrical type conversion of p-type HgCdTe induced by nanoimprinting
Type
D - Journal article
Title of journal
Journal of Applied Physics
Article number
096102
Volume number
109
Issue number
9
First page of article
-
ISSN of journal
0021-8979
Year of publication
2011
URL
-
Number of additional authors
10
Additional information
The paper describes a pioneering investigation carried out in collaboration with the University of Western Australia into a novel use of nano-imprint lithography. It aimed to overcome the well-known difficulty of producing n-type HgCdTe. It is shown that by creating a depression in a p-HgCdTe surface, localized type-conversion occurs around the imprinted area through inelastic deformation of the semiconductor. This result opens up the possibility of fabricating infrared p-n junction photodetector arrays based on HgCdTe using simple and cheap processing methods. Results from the work contributed to the award of EPSRC funding for SUPERCAMERA (EP/J018678/1, £1.5M).
Interdisciplinary
-
Cross-referral requested
-
Research group
A - Electronics & Nanoscale Engineering
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
