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Comparison of hydrogen silsesquioxane development methods for sub-10 nm electron beam lithography using accurate linewidth inspection

A major achievement arising from this work was the fabrication of 2.5 nm lines patterned in HSQ resist, some of the smallest features ever fabricated by electron beam lithography. Dimensions were verified using an accurate line-width metrology technique reported previously (DOI:10.1116/1.3505129 ). The paper makes an important contribution to the optimization of sub 10nm processes, and is being used commercially by Kelvin Nanotechnology Ltd. (brendan@kelvinnanotechnology.com). The techniques developed are used routinely by academic and industrial users of the James Watt Nanofabrication Centre (http://www.jwnc.gla.ac.uk).