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Benchmarking of scaled InGaAs implant-free NanoMOSFETs

This paper describes the first realistic Monte Carlo evaluation of the performance potential of III-V MOSFETs. The research is supported by the FP7 STREP project DUALLOGIC (www.ims.demokritos.gr/DUALLOGIC/) and highlights the advantages of a new device architecture called Implant Free Quantum Wire (IFQW) transistors for boosting the performance of n-channel CMOS transistors. The results have guided the project industrial partners (IBM, ST Microelectronics and IMEC) in developing prototype devices. The clear advantages of the IPQW transistor demonstrated by the simulations resulted in the inclusion of III-V channel transistors into the International Roadmap for Semiconductor from 2011 onwards (www.itrs.net/).