Output details
15 - General Engineering
University of Glasgow
Current variability in Si nanowire MOSFETs due to random dopants in the source/drain regions: a fully 3-D NEGF simulation study
This is the first report of full-scale quantum transport simulations in the presence of individual impurities with attractive potential. Funded by the EPSRC project 'Meeting the Material Challenges of Nano-CMOS Electronics' (GR/S80097/01), the paper illustrates the significant access resistance and on-current variability in sub-10 nm nano-wire transistors. The methodology developed forms the core of the Non-Equilibrium Green's Function (NEGF) transport module of the 3D 'atomistic' simulator GARAND licensed to GSS Ltd. (www.goldstandardsimulations.com/products), which is essential for the development of sub-10nm CMOS devices. The paper also resulted in a keynote talk at SISPD 2011.
