Output details

Defect-enhanced silicon-on-insulator waveguide resonant photodetector with high sensitivity at 1.55μm

This well-cited publication describes the results of a successful international collaboration where the facilities of the JWNC (www.jwnc.gla.ac.uk) played a central role. World-record results are reported for photo-diodes in a waveguide-based silicon integrated photonics environment, with sensitivities exceeding 100 mA/W at a wavelength of 1.55μm. The approach used involves defects generated by ion-implantation, a standard technology in silicon integrated circuit manufacture. The photo-diodes are therefore suitable for advanced telecommunications applications at wavelengths in the standard range used for large information-bandwidth fibre-optics. De La Rue gave an invited presentation on the work at Photonics 2010 (Guwahati, India, 2010).