Output details
15 - General Engineering
University of Cambridge
Article title
Nanoscale memory cell based on a nanoelectromechanical switched capacitor
Type
D - Journal article
Title of journal
NAT NANOTECHNOL
Article number
-
Volume number
3
Issue number
1
First page of article
26
ISSN of journal
1748-3387
Year of publication
2008
URL
-
Number of additional authors
8
Additional information
This work describes a completely new structure for electronic memory based on mechanical switching. It reports work which led directly to the research contract 'CNT based thin film supercapacitors' with Intel Corp, USA (RG49933 start date 15 October 2007 / end date 31 October 2010, award total GBP182,038.83). It also resulted in a number of invited talks the latest of which was at the IEEE International Reliability Physics Symposium, 15th - 19th April 2012 Anaheim CA, USA ( 'NEMS based Memory and Logic Circuits' DOI 10.1109/IRPS 2012.6241823).
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
