Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Imperial College London : B - Metallurgy and Materials
Germanium substrate loss during low temperature annealing and its influence on ion-implanted phosphorous dose loss
Capping of samples with Si3N4 is shown to eliminate the problem of germanium substrate loss during annealing, previously a potential show-stopper for Ge CMOS technology. SIMS experiments to measure P diffusion profiles in germanium were conducted with and without capping layers and the results were consistent with simulations based on germanium loss models as a function of capping. The SIMS collaboration with this Greek group helped us to secure a new time-of-flight(TOF)-SIMS LEIS apparatus EP/H006060/1 £2.3M (31/7/2009) and the results were presented at invited talks at the Indian-Society-For-Mass-Spectrometry conference(ISMAS WS2011 Munnar, November2011) and Materials Kolloquium (Erlangen June 2012).
