Output details
9 - Physics
Aberystwyth University
Article title
Iron-mediated growth of epitaxial graphene on SiC and diamond
Type
D - Journal article
Title of journal
Carbon
Article number
-
Volume number
50
Issue number
14
First page of article
5099
ISSN of journal
0008-6223
Year of publication
2012
URL
-
Number of additional authors
10
Additional information
Cooil and Williams were AU PhD students, and Cooil was awarded best student poster at the 2011 Diamond conference for this work. This new method for the fabrication of graphene has the potential to become the preferred method for graphene on semiconductor growth and was patented in 2011. The key discovery is enabled by real-time photoemission at Aberystwyth on both materials and this is supported by many complementary methods.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Citation count
0
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
