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Strong dependence of spin dynamics on the orientation of an external magnetic field for InSb and InAs

Examines spin effects in InSb and InAs epi-layers, because spin is a potential vector in future digital switches. Such devices may be successors to InSb based “conventional” transistors, as presented in a succession of papers at the International Electron Devices Meetings (2005, 2008, invited paper in 2009) in collaboration with Intel Corporation (Robert.S.Chau@intel.com) that investigated the potential of InSb based III-V materials for future logic. III-V materials are now established on the International Technology Roadmap for Semiconductors, in part as a consequence of this work, which was performed over 7 successive contracts totalling many million dollars (amount is commercially sensitive).