You are in : Home » Results & submissions » Select UOA » 15 - General Engineering » View submission: University of Warwick » Outputs » Detail

Output details

15 - General Engineering

University of Warwick

Return to search Previous output Next output

Output 255 of 344 in the submission

Article title

Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates

Type

D - Journal article

DOI

10.1063/1.2975188

Title of journal

Applied Physics Letters

Article number

072108

Volume number

Issue number

First page of article

ISSN of journal

0003-6951

Year of publication

2008

URL

Number of additional authors

Additional information

This paper demonstrated that highly tensile strained silicon could remain strained for layers far thicker than the expected critical thickness for relaxation. The work enabled the NanoSilicon group to better understand relaxation processes in tensile, as opposed to compressive, strained materials and has underpinned a large body of future work based on relaxation under tensile strain e.g. APL 97, 162104 (2010) and including EPSRC projects Renaissance Ge (EP/F031408/1), UK Silicon Photonics (EP/E065317/1), and an EPSRC Platform Grant (EP/J001074/1).

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract