Output details
15 - General Engineering
University of Warwick
Article title
Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates
Type
D - Journal article
Title of journal
Applied Physics Letters
Article number
032107
Volume number
101
Issue number
3
First page of article
-
ISSN of journal
0003-6951
Year of publication
2012
URL
-
Number of additional authors
2
Additional information
Efficient light emission from silicon is a grand challenge in semiconductor engineering (Iyer and Xie, Science, 1993). This paper shows how defects in silicon can be controlled to produce luminescence in the infrared. Extended defects are created by a low-cost thermal process based on precipitation of grown-in oxygen. A new mechanism for the luminescence is proposed. Dr Sobolev (Ioffe Institute, St Petersburg, Russia nick@sobolev.ioffe.rssi.ru) contacted Murphy having read the publication. This led to a Royal Society International Exchanges Grant (IE130110) to produce silicon-based LEDs using findings in the paper.
Interdisciplinary
-
Cross-referral requested
-
Research group
D - Multifunctional Systems
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
