Output details
15 - General Engineering
University of Warwick
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Article title
Strain dependence of electron-phonon energy loss rate in many-valley semiconductors
Type
D - Journal article
Title of journal
Applied Physics Letters
Article number
182103
Volume number
98
Issue number
18
First page of article
-
ISSN of journal
0003-6951
Year of publication
2011
URL
-
Number of additional authors
10
Additional information
Output from a Basic Technology project (EP/F040784/1) led by Leadley and collaborating with groups in Aalto and VTT in Finland on development of on-chip electronic cooling. This paper demonstrates that strain reduces the electron-phonon coupling in silicon and therefore improves thermal isolation of the charge carriers from the lattice. As a consequence of this work, we have been able to develop electronic cooling to below 100mK based on strained silicon cooling elements, patent applications (pending) and lead WP3 of EU FP7 project "Nanofunction".
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
