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Reverse graded relaxed buffers for high Ge content SiGe virtual substrates

This paper reports epitaxial growth of strain-tuning, relaxed SiGe buffer layers on a silicon substrate with high Ge content that are simultaneously much thinner, smoother and with a lower defect content than previously attained. These buffers enable strained Ge layers to be grown and have underpinned much of the Warwick NanoSilicon group’s research in the REF period, resulting in 25 journal papers and 47 conference presentations (www.warwick.ac.uk/silicon). This work also underpins EPSRC projects on Renaissance Ge (EP/F031408/1), UK Silicon Photonics (EP/E065317/1), Room Temperature Terahertz Quantum Cascade Lasers on Silicon Substrates (EP/H025294/1) and an EPSRC Platform Grant (EP/J001074/1).