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13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Southampton

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Output 129 of 326 in the submission

Article title

Germanium fin light-emitting diode

Type

D - Journal article

DOI

10.1063/1.3670053

Title of journal

Applied Physics Letters

Article number

Volume number

Issue number

First page of article

241105

ISSN of journal

0003-6951

Year of publication

2011

URL

http://www.eprints.soton.ac.uk/353146

Number of additional authors

Additional information

Significance of output:

This paper describes the fabrication and characterisation of germanium fin structures for silicon photonics and fibre optics applications at a wavelength of 1.6 micro-meter. By injecting forward current, light emission from the germanium fins was demonstrated for the first time. The germanium fin structures were fabricated by novel selective oxidation of silicon without consuming germanium in the fins. High-quality crystalline structures were demonstrated, and excellent electrical characteristics obtained, including a record lowest diode dark current. This work has led to 2 patent applications [JP2012-208137, JP2013-012547], and 2 invited talks [ECS221, IEICE11].

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract