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Output details

13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Southampton

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Output 136 of 326 in the submission
Article title

High contrast 40Gbit/s optical modulation in silicon

Type
D - Journal article
Title of journal
Optics Express
Article number
-
Volume number
19
Issue number
12
First page of article
11507
ISSN of journal
1094-4087
Year of publication
2011
Number of additional authors
7
Additional information

Significance of output:

Reports the first experimental silicon modulator to demonstrate high extinction ratio at 40Gbit/s (world-record performance), demonstrating viable high data rate modulation in silicon. Experimental verification of Reed’s previous publication and patent (first design of reverse-biased pn-junction modulators in silicon). Accepted as the standard design method for silicon modulators. Resulted from €8M funding to a European consortium in the flagship silicon photonics project (“HELIOS” FP7–224312 1/5/2008–31/11/12). This output was identified by the Optical Society of America (via Web of Science) as among the top 20 most cited papers in Optics Express in 2-years ending April 2013.

Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-