Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Surrey
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Article title
Multiphysics Modeling of RF and Microwave High-Power Transistors
Type
D - Journal article
Title of journal
IEEE Transactions on Microwave Theory and Techniques
Article number
-
Volume number
60
Issue number
12
First page of article
4013
ISSN of journal
1557-9670
Year of publication
2012
URL
-
Number of additional authors
-
Additional information
The methodology set out in the paper provides a new and comprehensive approach to modeling of high power microwave transistors. The work demonstrated the ability to capture thermal, electrical and electromagnetic requirements in time and spatial domains across the die. The results reveal startling and previously unknown behaviour with important consequences for high performance design. The work is a key stage development for Freescale Semiconductor, who are one of the World’s largest manufacturers of high frequency, high power transistors and has already led to substantial efficiency improvements in their RF power transistors.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-