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Multiphysics Modeling of RF and Microwave High-Power Transistors

The methodology set out in the paper provides a new and comprehensive approach to modeling of high power microwave transistors. The work demonstrated the ability to capture thermal, electrical and electromagnetic requirements in time and spatial domains across the die. The results reveal startling and previously unknown behaviour with important consequences for high performance design. The work is a key stage development for Freescale Semiconductor, who are one of the World’s largest manufacturers of high frequency, high power transistors and has already led to substantial efficiency improvements in their RF power transistors.