Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Surrey
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Article title
Large-Scale Multiple Cell Upsets in 90 nm Commercial SRAMs During Neutron Irradiation
Type
D - Journal article
Title of journal
IEEE Transactions on Nuclear Science
Article number
-
Volume number
59
Issue number
6
First page of article
2824
ISSN of journal
1558-1578
Year of publication
2012
URL
-
Number of additional authors
-
Additional information
Neutron induced upsets are of growing importance for the reliability of commercial microelectronics used in aerospace and nuclear applications. This paper reports on experimental irradiations of 90nm SRAM technology in facilities replicating high altitude neutron environments. Very large-scale multiple cell upset events (>100 cells) were observed compared with previous work on SRAMs, often affecting multiple bits in the same word (up to 7 out of 8). The impact is that such errors cannot be readily rectified by conventional error detection and correction (EDAC) methods which presents major challenges in future avionics designs.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
