Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Surrey
Large-Scale Multiple Cell Upsets in 90 nm Commercial SRAMs During Neutron Irradiation
Neutron induced upsets are of growing importance for the reliability of commercial microelectronics used in aerospace and nuclear applications. This paper reports on experimental irradiations of 90nm SRAM technology in facilities replicating high altitude neutron environments. Very large-scale multiple cell upset events (>100 cells) were observed compared with previous work on SRAMs, often affecting multiple bits in the same word (up to 7 out of 8). The impact is that such errors cannot be readily rectified by conventional error detection and correction (EDAC) methods which presents major challenges in future avionics designs.