Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Surrey
Intrinsic Gain in Self-Aligned Polysilicon Source-Gated Transistors
The Source-Gated Transistor was invented and patented at Surrey (US7763938) and a licence is currently held by Philips. Substantially higher gain than conventional transistors make SGTs ideal for high performance amplification in large area electronics. This is important in established technologies such as polysilicon and emerging processes (solution-processable, flexible) where material specifications are comparatively inferior, for enabling a new class of analog and mixed-signal circuits. SGTs are now being positioned for exploitation in graphene transistors and plastic electronics by major multinationals (who we are working with).