Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Surrey
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Article title
Intrinsic Gain in Self-Aligned Polysilicon Source-Gated Transistors
Type
D - Journal article
Title of journal
IEEE Transactions on Electron Devices
Article number
-
Volume number
57
Issue number
10
First page of article
2434
ISSN of journal
1557-9646
Year of publication
2010
URL
-
Number of additional authors
-
Additional information
The Source-Gated Transistor was invented and patented at Surrey (US7763938) and a licence is currently held by Philips. Substantially higher gain than conventional transistors make SGTs ideal for high performance amplification in large area electronics. This is important in established technologies such as polysilicon and emerging processes (solution-processable, flexible) where material specifications are comparatively inferior, for enabling a new class of analog and mixed-signal circuits. SGTs are now being positioned for exploitation in graphene transistors and plastic electronics by major multinationals (who we are working with).
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
