Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Surrey
Return to search
Output 0 of 0 in the submission
Article title
Molecular Doping and Band-Gap Opening of Bilayer Graphene
Type
D - Journal article
Title of journal
ACS Nano
Article number
-
Volume number
7
Issue number
3
First page of article
2790
ISSN of journal
1936-086X
Year of publication
2013
URL
-
Number of additional authors
-
Additional information
Electrical band gaps of 150 meV are demonstrated using facile chemical functionalization on bilayer graphene without comprising intrinsic carrier mobility. The impact of the research will lead to improved transistor ON/OFF current ratios and optical adsorption between 2.8-4 micron will lead to new efficient environmentally friendly photodetectors replacing InSb, HgCdTe and PbSe. This high impact paper is core to the £1.8m EPSRC Strategic Equipment bid on large area manufacturing of graphene.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-