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13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Surrey

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Article title

Molecular Doping and Band-Gap Opening of Bilayer Graphene

Type

D - Journal article

DOI

10.1021/nn400340q

Title of journal

ACS Nano

Article number

Volume number

Issue number

First page of article

2790

ISSN of journal

1936-086X

Year of publication

2013

URL

Number of additional authors

Additional information

Electrical band gaps of 150 meV are demonstrated using facile chemical functionalization on bilayer graphene without comprising intrinsic carrier mobility. The impact of the research will lead to improved transistor ON/OFF current ratios and optical adsorption between 2.8-4 micron will lead to new efficient environmentally friendly photodetectors replacing InSb, HgCdTe and PbSe. This high impact paper is core to the £1.8m EPSRC Strategic Equipment bid on large area manufacturing of graphene.

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract