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13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Plymouth
Transfer-free growth of graphene on SiO2 insulator substrate from sputtered carbon and nickel films
The key to the technological exploitation of graphene lies in being able to produce large-scale, high-quality graphene directly on insulator wafers. Developed from our patented concept (GB 1209468.6) and initial paper on graphene production (arXiv:1209.0489), we report for the first time a new method to produce large-area transfer-free graphene on SiO2 insulator substrates from sputtered C/Ni/SiO2 systems, and a new model for the growth of graphene. The work advances graphene growth technology a step closer towards its electronic device applications, and also enables us to explore graphene nanoelectronics and biosensors on device compatible wafers.
