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Direct measurement of coherency limits for strain relaxation in heteroepitaxial core/shell nanowires

This paper presents the first experimental measurement of the critical relaxation thickness for strain relaxation in a semiconductor nanowire heterostructure. The relaxation mechanism is also identified. The results are further verified through molecular dynamics and dislocation dynamics simulations. The results will permit the development of core/shell nanowire structures within known stability boundaries. This recent work has already inspired 4 further papers by co-authors. Core/shell nanowires are important for high efficiency charge transport, and the shell stability shown here has been highlighted in other work for InAs/InP nanowires (Andrew Lin, UCLA, andrewlin@ucla.edu).