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13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Salford

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Article title

Atomic Layer Deposition of Ru/RuO2Thin Films Studied by In situ Infrared Spectroscopy

Type

D - Journal article

DOI

10.1021/cm903793u

Title of journal

Chemistry of Materials

Article number

Volume number

Issue number

First page of article

4867

ISSN of journal

1520-5002

Year of publication

2010

URL

Number of additional authors

Additional information

This paper is concerned with the atomic layer deposition of ruthenium using a precursor that was designed specifically for the purpose at Salford (inclusion of an ethyl group to favour H elimination) and synthesized using a new procedure devised at Salford that made it commercially viable. The primary commercial application of ruthenium thin films grown by ALD is as a barrier layer. It was part of programme funded by Epichem (and latterly SAFC HiTech) at Salford into commercially viable transition metal ALD precursors. This work is the subject of a patent application.

Interdisciplinary

Cross-referral requested

Research group

B - Materials synthesis and characterisation

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract