Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Salford
Excitonic and biexcitonic properties of single GaN quantum dots modeled by 8-band k⋅p theory and configuration-interaction method
The paper discusses for the first time the excitonic structure of the wurtzite quantum dots from the full configuration interaction method that takes the effects of electron correlation and exchange explicitly. It reviles conditions required for the successful operation of the single photon sources. The paper triggered collaboration on the material properties with the University of Manchester and on the device design with the University of Lancaster. It was presented in the form of invited talk at several international conferences. Phenomena discovered here lead to the EPSRC grant (£325,000) (contact: r.j.young@lancaster.ac.uk).
