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Output details

15 - General Engineering

University of Edinburgh (joint submission with Heriot-Watt University)

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Output 247 of 305 in the submission
Article title

Scaleable Single-Photon Avalanche Diode Structures in Nanometer CMOS Technology

Type
D - Journal article
Title of journal
IEEE Transactions on Electron Devices
Article number
-
Volume number
58
Issue number
7
First page of article
2028
ISSN of journal
0018-9383
Year of publication
2011
Number of additional authors
3
Additional information

This is the first reported SPAD detector in a nanometer-scale CMOS process. It has the smallest single-detector area, the lowest noise and the highest sensitivity. ST Microelectronics (Lindsay Grant, email available) filed a patent application (US2012205731) and based two major product developments on this detector. ST Microelectronics has made an investment of £450k for follow-on research in ERPE. These detectors were key to the £1.6M EU FP6 MegaFrame project (029217), securing the £3.5M EU FP7 SPADnet project (257914). Biophotonics cancer research is being conducted with King's College through a joint £640k BBSRC project (BB/I022074/1), based on cameras employing these detectors.

Interdisciplinary
-
Cross-referral requested
-
Research group
B - Sensors, Signals & Systems
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-