Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Imperial College London : B - Metallurgy and Materials
Deviations from Vegard's law in ternary III-V alloys
III-V semiconductors are alloyed to satisfy device band gaps requirements. These alloys are fabricated on inert substrates or as multi-layers with strain-matching an imperative. This paper reports and demonstrates the accuracy of a relationship linking the relative size of the group III atoms (B, Al, Ga & In) in As ternary alloys and the predicted magnitude of the deviation from Vegard’s law, thereby facilitating future accurate composition selection. Full funding for an overseas PhD student was secured from the King Abdullah University of Science&Technology(KAUST) to extend this approach to alloys containing other group V elements and surface structure relaxation predictions.