Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Imperial College London : B - Metallurgy and Materials
Free electron behavior in InN: On the role of dislocations and surface electron accumulation
InN is widely used in combination with GaN or AlN to produce high efficiency optoelectronic devices. To optimise these devices their electronic behaviour needs to be fully understood. In this work we have shown many of the previous assumptions of relationship between electronic behaviour of InN and processing parameters are incorrect and that incorporation of point defects is also important, particularly hydrogen. This work was initially funded by a Swedish research council grant: 2005-5054 and has led to further funding for 3 years also funded by the Swedish research council, grant No:2010-3848, value ~£230K.