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Output details

13 - Electrical and Electronic Engineering, Metallurgy and Materials

Newcastle University

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Output 13 of 114 in the submission

Article title

Analysis of self-heating effects in ultrathin-body SOI MOSFETs by device simulation

Type

D - Journal article

DOI

10.1109/TED.2007.911354

Title of journal

IEEE Transactions on Electron Devices

Article number

Volume number

Issue number

First page of article

233

ISSN of journal

1557-9646

Year of publication

2008

URL

http://dx.doi.org/10.1109/TED.2007.911354

Number of additional authors

Additional information

This invited paper concerns issues relating to heating effects in MOSFETS as dimensions shrink. It is joint with Bologna University (world leaders in device simulation). Heating is a major challenge as integrated circuits shrink and a chief reason why there has been a shift to multi-core processors. This research involves computer simulation to understand self-heating and points to potential solutions through improved device design. It draws attention to the ultra thin films used in CMOS having a much larger “effective” thickness, making them more insulating. This happens because of phonon boundary scattering which reduces their mean free path.

Interdisciplinary

Cross-referral requested

Research group

B - Emerging Technologies & Materials (ETM)

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract