Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Newcastle University
Article title
Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack
Type
D - Journal article
Title of journal
Applied Physics Letters
Article number
042904
Volume number
92
Issue number
4
First page of article
-
ISSN of journal
1077-3118
Year of publication
2008
Number of additional authors
5
Additional information
SiC is an emerging material for high temperature and power electronics but it lacks a suitable material for the gate oxide of devices. The paper reports the first fabrication of a novel gate oxide concept for SiC electronics – using both HfO2 and SiO2 in a way analogous to that used in silicon electronics. It has direct application in both SiC transistors and sensors (for example gas sensors for high temperature detection of exhaust gases in jet engines) and is now being applied to real products by the industrial sponsors (Robin Thomson, Raytheon, 01592762235).
Interdisciplinary
-
Cross-referral requested
-
Research group
B - Emerging Technologies & Materials (ETM)
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
