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Output details

13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Manchester : B - Electrical and Electronic Engineering

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Output 30 of 179 in the submission

Article title

Characterization of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 μm wavelength illumination for terahertz generation and detection

Type

D - Journal article

DOI

10.1063/1.4719052

Title of journal

Journal of Applied Physics

Article number

Volume number

111

Issue number

First page of article

103105

ISSN of journal

1089-7550

Year of publication

2012

URL

Number of additional authors

Additional information

The production of compact, portable, consumer-like THz imaging systems has been so far been unrealised. This paper describes new materials systems and methodologies that resulted in devices having some of the most desirable characteristics for potential use as THz antenna emitters and detectors with low cost commercial telecom lasers. This work, which was published in the leading journal of semiconductor materials, was selected by the APS and AIP for inclusion in the 'SOURCES' section of the Virtual Journal of Ultrafast Science 11(6), (http://www.vjultrafast.org).

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract