Output details
15 - General Engineering
Swansea University
Article title
Integration of HfO[sub 2] on Si-SiC heterojunctions for the gate architecture of SiC power devices
Type
D - Journal article
Title of journal
Applied Physics Letters
Article number
-
Volume number
97
Issue number
1
First page of article
013506
ISSN of journal
0003-6951
Year of publication
2010
URL
-
Number of additional authors
11
Additional information
This paper is one of 18 publications produced as part of the DTI technology programme project "INTRINSiC" (Interactive Research in Silicon Carbide). This 3 year £1.1m project, commenced ran from 2006-2009, and involved six industrial and two academic partners. INTRINSIC is developing novel silicon carbide device technology. The paper decribes the interfacial behaviour of key new dielectric materials - applied as SiC gates.
Interdisciplinary
-
Cross-referral requested
-
Research group
A - Multidisciplinary Nanotechnology Centre
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
