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15 - General Engineering

University of Nottingham

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Output 476 of 524 in the submission

Article title

Thermal instability effects in SiC power MOSFETs

Type

D - Journal article

DOI

10.1016/j.microrel.2012.06.096

Title of journal

Microelectronics Reliability

Article number

Volume number

Issue number

9–10

First page of article

2414–241

ISSN of journal

0026-2714

Year of publication

2012

URL

Number of additional authors

Additional information

This comparative study of thermal instabilities in Silicon Carbide power MOSFETs identifies important application issues for this new class of power semiconductor. Follow-on studies are being supported by key industrialists through the European Centre for Power Electronics (Jochen.Koszescha@ecpe.org).

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract