Output details
15 - General Engineering
University of Bristol
A First Approach to a Design Method for Resonant Gate Driver Architectures
Transforming between voltages (e.g. mains voltage to 12V) is extremely common requirement and very high efficiencies can be attained by using "super-junction" MOSFETs. However, power is dissipated in their gate driver circuits, reducing efficiency. Energy recovery circuitry can be used, and much work has been published on this. Paper presents, for first time, comprehensive taxonomical study of possible circuit topologies. In addition to silicon-MOSFET drivers, work yielded circuitry for addressing particular challenges presented by emerging silicon-carbide devices. Work led to McNeill's EPSRC First Grant (EP/K019333/1, £124,921, 2013).