Output details
9 - Physics
University of Nottingham
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Output 0 of 0 in the submission
Article title
Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics
Type
D - Journal article
Title of journal
Nature Nanotechnology
Article number
-
Volume number
8
Issue number
2
First page of article
100
ISSN of journal
1748-3387
Year of publication
2013
Number of additional authors
14
Additional information
This paper resulted from a collaborative research project, involving four institutions (University of Manchester, University of Nottingham, Institute for Microelectronics Technology in Russia and Seoul National University), focusing on a new type of electronic device: the graphene vertical FET. Makarovsky carried out (in Nottingham) the low-current measurements, which form a key part of the paper (see Figs. 2-4). In order to make these measurements, Makarovsky developed a novel low-current measurement technique and constructed a new experimental arrangement.
Interdisciplinary
-
Cross-referral requested
-
Research group
D - Experimental Condensed Matter and Nanoscience
Citation count
28
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
