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Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers

From a project that grew out of collaboration with Materials and Engineering Research Institute (MERI) at Sheffield Hallam University to understand the factors that affect the electronic properties of metal contacts to large bandgap materials. This paper successfully demonstrated the crucial interplay between the nanoscale structure of the metal-semiconductor interface and the resulting electrical properties. The author made a substantial contribution to the conception and design of the study, the organisation of the study and to the development of the theoretical model.