Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Southampton
Article title
An ultra low power MMIC amplifier using 50nm delta doped In0.52Al0.48As / In0.53Ga0.47As metamorphic HEMT
Type
D - Journal article
Title of journal
IEEE Electron Device Letters
Article number
-
Volume number
31
Issue number
11
First page of article
1230
ISSN of journal
0741-3106
Year of publication
2010
Number of additional authors
5
Additional information
Significance of output:
This research demonstrates a state-of-the-art ultra-low power monolithic high frequency amplifier using metamorphic GaAs high electron mobility transistor. The device is characterised by ultra-low dc power consumption (0.9 mW), good dynamic range performance and a gain of 7.2 dB. This level of performance is comparable to current state-of-the-art InP based device but at greatly reduced(potentially 10%) of the cost. The material and circuit design have been optimised for industrial, scientific and medical band at 24 GHz, with applications in wireless sensor networks.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
