Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Queen's University Belfast
Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates
This paper describes the ALD high-k dielectric process established under the EU-funded Nanotec NI centre of excellence, in partnership with the University of Ulster. Close co-operation with the equipment supplier (Oxford Instruments) resulted in a joint ALD conference paper and provided initial results for the development of their ALD product range. Atomic layer deposition is a key technique for ultra-thin coatings in nanoelectronics and hafnium dioxide (HfO2) was chosen as an exemplar. The main application of ALD HfO2 is for advanced MOS gate stacks, and this paper also includes an early report of a high-k gate stack on high-mobility germanium.