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13 - Electrical and Electronic Engineering, Metallurgy and Materials

Liverpool John Moores University

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Article title

Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47As Implant Free Quantum Well MOSFET

Type

D - Journal article

DOI

10.1109/TNANO.2012.2199514

Title of journal

IEEE TRANSACTIONS ON NANOTECHNOLOGY

Article number

Volume number

Issue number

First page of article

808

ISSN of journal

1536-125X

Year of publication

2012

URL

Number of additional authors

Additional information

* The first paper ever to propose and analyse a new In0.53Ga0.47 implant-free quantum-well (IFQW) MOSFET architecture.

* Significant as it demonstrates that the IFQW is a promising candidate for the future CMOS technology with better electrostatic integrity, much lower sensitivity to the interface states density, and larger drive current than the conventional devices.

* The results have been disseminated widely through one of the largest European Commission (EC) research projects (FP7) DUALLOGIC involving eight organisations, e.g IBM, ST Microelectronics, AIXTRON, IMEC (Marc Meuris, Program Manager, meuris@imec.be) and have led to the fabrication of the first IFQW device.

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract