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13 - Electrical and Electronic Engineering, Metallurgy and Materials

Liverpool John Moores University

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Article title

Read and pass disturbance in the programmed states of floating gate flash memory cells with high-κ interpoly gate dielectric stacks

Type

D - Journal article

DOI

10.1109/TED.2013.2264163

Title of journal

IEEE Transactions on Electron Devices

Article number

Volume number

Issue number

First page of article

2261

ISSN of journal

0018-9383

Year of publication

2013

URL

Number of additional authors

Additional information

* The first paper ever that identified the electron trapping and detrapping in the IPD stacks as the source for the read/pass disturbance in Flash memory.

* Significant as the identification of the origin of the disturbance opens a way for its minimization through material selection and structure optimisation in the development of future Flash memory technology.

* The results have led to two new official projects (600,000 Euros) collaborating with world leading research consortium at IMEC including Intel and Samsung from 2014-2016 (Dr. Houdt, IMEC Memory Group Manager, vanhoudt@imec.be), to investigate the new 3D and RRAM memory technology, respectively.

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract