Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Liverpool John Moores University
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Article title
Stress-induced positive charge in Hf-based gate dielectrics: Impact on device performance and a framework for the defect
Type
D - Journal article
Title of journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Article number
-
Volume number
55
Issue number
7
First page of article
1647
ISSN of journal
0018-9383
Year of publication
2008
URL
-
Number of additional authors
8
Additional information
* The first paper ever to propose a framework for stress-induced positive charges in Hf-based gate dielectrics, the new material selected by Intel for its latest generation of CMOS technology.
* Significant as it laid the scientific foundation for developing new techniques for predicting device lifetime caused by negative bias temperature instabilities, needed by the industry.
* The knowledge gained from this work led to the award of an EPSRC research grant “High permittivity dielectrics on Ge for end of Roadmap application” (Grant No: EP/I012966/1, £462k), together with Cambridge and Liverpool Universities.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
